Oxide TFT fabrication with various low temperature techniques

S. Hong; H. J. Kim; I. S. Lee; H. T. Kim; H. J. Kim

doi:10.1149/08611.0095ecst

Oxide TFT fabrication with various low temperature techniques

S. Hong, H. J. Kim, I. S. Lee, H. T. Kim, H. J. Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO:) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.

Original language	English
Title of host publication	ECS Transactions
Editors	Yue Kuo
Publisher	Electrochemical Society Inc.
Pages	95-104
Number of pages	10
Edition	11
ISBN (Electronic)	9781510871717, 9781607688570
DOIs	https://doi.org/10.1149/08611.0095ecst
Publication status	Published - 2018
Event	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sept 30 → 2018 Oct 4

Publication series

Name	ECS Transactions
Number	11
Volume	86
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	18/9/30 → 18/10/4

Bibliographical note

Publisher Copyright:
© 2018 Electrochemical Society Inc.All rights reserved.

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/08611.0095ecst

Cite this

@inproceedings{bc323c69dc244bbcaa9d47541fcbded2,

title = "Oxide TFT fabrication with various low temperature techniques",

abstract = "We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO:) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.",

author = "S. Hong and Kim, {H. J.} and Lee, {I. S.} and Kim, {H. T.} and Kim, {H. J.}",

note = "Publisher Copyright: {\textcopyright} 2018 Electrochemical Society Inc.All rights reserved.; Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",

year = "2018",

doi = "10.1149/08611.0095ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "95--104",

editor = "Yue Kuo",

booktitle = "ECS Transactions",

edition = "11",

}

Hong, S, Kim, HJ, Lee, IS, Kim, HT & Kim, HJ 2018, Oxide TFT fabrication with various low temperature techniques. in Y Kuo (ed.), ECS Transactions. 11 edn, ECS Transactions, no. 11, vol. 86, Electrochemical Society Inc., pp. 95-104, Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08611.0095ecst

TY - GEN

T1 - Oxide TFT fabrication with various low temperature techniques

AU - Hong, S.

AU - Kim, H. J.

AU - Lee, I. S.

AU - Kim, H. T.

AU - Kim, H. J.

PY - 2018

Y1 - 2018

N2 - We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO:) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.

AB - We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO:) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.

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UR - http://www.scopus.com/inward/citedby.url?scp=85058282209&partnerID=8YFLogxK

U2 - 10.1149/08611.0095ecst

DO - 10.1149/08611.0095ecst

M3 - Conference contribution

AN - SCOPUS:85058282209

T3 - ECS Transactions

SP - 95

EP - 104

BT - ECS Transactions

A2 - Kuo, Yue

PB - Electrochemical Society Inc.

T2 - Symposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting

Y2 - 30 September 2018 through 4 October 2018

ER -

Oxide TFT fabrication with various low temperature techniques

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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