Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method

Sachindranath Das; Subhasish Patra; Jyoti Prakash Kar; Atanu Roy; Apurba Ray; Jae Min Myoung

doi:10.1016/j.matlet.2015.09.075

Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method

Sachindranath Das, Subhasish Patra, Jyoti Prakash Kar, Atanu Roy, Apurba Ray, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Undoped and nitrogen-doped ZnO nanostructures were grown by Metal Organic Chemical Vapor Deposition method onto Sapphire substrates using NH₃ gas as N source. Structural and optical characterizations of undoped and N-doped ZnO nanostructures were done. The XRD studies show that a few peaks arose and the relative intensities of other peaks [in comparison to (002)] increase with higher incorporation of N. PL studies revealed that the width and intensity of PL peaks are strongly influenced by NH₃ concentration during growth, which creates a few donor levels (arising due to structural defects) as well as acceptor levels (arising due to N doping). With increase of NH₃ concentration during deposition, O substitution by N increases and more N_O defects appear in PL spectrum. The effect of oxygen vacancies was compensated by the effect of defect levels appears due to N doping, which causes the p-type nature of N-doped ZnO. The p-type nature of the N-doped ZnO nanostructures was also confirmed by using Hall-effect measurement.

Original language	English
Article number	19591
Pages (from-to)	701-704
Number of pages	4
Journal	Materials Letters
Volume	161
DOIs	https://doi.org/10.1016/j.matlet.2015.09.075
Publication status	Published - 2015 Dec 15

Bibliographical note

Funding Information:
Author J.M. Myoung thanks LG Display (Grant No. 2014-11-1905) for granting financial support. Author S. Das thanks DST, Government of India (Grant No. DST/2013/PH-71 dated 07/01/2014) , for granting financial support.

Publisher Copyright:
© 2015 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2015.09.075

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title = "Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method",

abstract = "Undoped and nitrogen-doped ZnO nanostructures were grown by Metal Organic Chemical Vapor Deposition method onto Sapphire substrates using NH3 gas as N source. Structural and optical characterizations of undoped and N-doped ZnO nanostructures were done. The XRD studies show that a few peaks arose and the relative intensities of other peaks [in comparison to (002)] increase with higher incorporation of N. PL studies revealed that the width and intensity of PL peaks are strongly influenced by NH3 concentration during growth, which creates a few donor levels (arising due to structural defects) as well as acceptor levels (arising due to N doping). With increase of NH3 concentration during deposition, O substitution by N increases and more NO defects appear in PL spectrum. The effect of oxygen vacancies was compensated by the effect of defect levels appears due to N doping, which causes the p-type nature of N-doped ZnO. The p-type nature of the N-doped ZnO nanostructures was also confirmed by using Hall-effect measurement.",

author = "Sachindranath Das and Subhasish Patra and {Prakash Kar}, Jyoti and Atanu Roy and Apurba Ray and Myoung, {Jae Min}",

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doi = "10.1016/j.matlet.2015.09.075",

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AU - Das, Sachindranath

AU - Patra, Subhasish

AU - Prakash Kar, Jyoti

AU - Roy, Atanu

AU - Ray, Apurba

AU - Myoung, Jae Min

N1 - Funding Information: Author J.M. Myoung thanks LG Display (Grant No. 2014-11-1905) for granting financial support. Author S. Das thanks DST, Government of India (Grant No. DST/2013/PH-71 dated 07/01/2014) , for granting financial support. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/12/15

Y1 - 2015/12/15

N2 - Undoped and nitrogen-doped ZnO nanostructures were grown by Metal Organic Chemical Vapor Deposition method onto Sapphire substrates using NH3 gas as N source. Structural and optical characterizations of undoped and N-doped ZnO nanostructures were done. The XRD studies show that a few peaks arose and the relative intensities of other peaks [in comparison to (002)] increase with higher incorporation of N. PL studies revealed that the width and intensity of PL peaks are strongly influenced by NH3 concentration during growth, which creates a few donor levels (arising due to structural defects) as well as acceptor levels (arising due to N doping). With increase of NH3 concentration during deposition, O substitution by N increases and more NO defects appear in PL spectrum. The effect of oxygen vacancies was compensated by the effect of defect levels appears due to N doping, which causes the p-type nature of N-doped ZnO. The p-type nature of the N-doped ZnO nanostructures was also confirmed by using Hall-effect measurement.

AB - Undoped and nitrogen-doped ZnO nanostructures were grown by Metal Organic Chemical Vapor Deposition method onto Sapphire substrates using NH3 gas as N source. Structural and optical characterizations of undoped and N-doped ZnO nanostructures were done. The XRD studies show that a few peaks arose and the relative intensities of other peaks [in comparison to (002)] increase with higher incorporation of N. PL studies revealed that the width and intensity of PL peaks are strongly influenced by NH3 concentration during growth, which creates a few donor levels (arising due to structural defects) as well as acceptor levels (arising due to N doping). With increase of NH3 concentration during deposition, O substitution by N increases and more NO defects appear in PL spectrum. The effect of oxygen vacancies was compensated by the effect of defect levels appears due to N doping, which causes the p-type nature of N-doped ZnO. The p-type nature of the N-doped ZnO nanostructures was also confirmed by using Hall-effect measurement.

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Origin of p-type conductivity for N-doped ZnO nanostructure synthesized by MOCVD method

Abstract

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