Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

Byung Du Ahn, Hyun Soo Shin, Dong Lim Kim, Seung Min Lee, Jin Seong Park, Gun Hee Kim, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	1
Publication status	Published - 2012 Jan

Cite this

@article{1234d1c5fbae4c8eadb3ebb6267825c8,

title = "Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization",

author = "Ahn, {Byung Du} and Shin, {Hyun Soo} and Kim, {Dong Lim} and Lee, {Seung Min} and Park, {Jin Seong} and Kim, {Gun Hee} and Kim, {Heon Je}",

year = "2012",

month = jan,

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

AU - Ahn, Byung Du

AU - Shin, Hyun Soo

AU - Kim, Dong Lim

AU - Lee, Seung Min

AU - Park, Jin Seong

AU - Kim, Gun Hee

AU - Kim, Heon Je

PY - 2012/1

Y1 - 2012/1

M3 - Article

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1

ER -