Organic thin-film transistors using thin ormosil-based hybrid dielectric

Sunho Jeong, Dongjo Kim, Sul Lee, Bong Kyun Park, Jooho Moon

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We synthesized a novel thermally-crosslinkable ormosil-based hybrid material as a solution-processable dielectric layer for organic thin-film transistors (OTFTs). Dielectrics with a thickness of 50-260 nm were fabricated via spin-coating in order to evaluate their applicability as an ultra-thin gate dielectric. It was observed that the capacitance of the hybrid dielectric increases with decreasing film thickness. Hybrid dielectrics with a thickness of 260 nm and 160 nm, respectively, exhibited adequate leakage current behavior. Coplanar-type OTFTs were fabricated using each of the hybrid dielectrics (i.e., thickness of 260 nm and 160 nm). The off-current, threshold voltage, and field-effect mobility of both transistors were analyzed to investigate the effects of capacitance and film thickness on the electrical performance of the transistors.

Original languageEnglish
Pages (from-to)7701-7705
Number of pages5
JournalThin Solid Films
Issue number19 SPEC. ISS.
Publication statusPublished - 2007 Jul 16

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory (NRL) Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Organic thin-film transistors using thin ormosil-based hybrid dielectric'. Together they form a unique fingerprint.

Cite this