Organic photovoltaic devices with Ga-doped ZnO electrode

J. Owen, M. S. Son, K. H. Yoo, B. D. Ahn, S. Y. Lee

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)


The authors report two organic photovoltaic devices using a Ga-doped ZnO (GZO) film as a transparent conducting electrode. In the first structure, the conventional In2 O3: Sn hole-collecting anode was replaced by GZO and an efficiency of 0.35% was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4%. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

Original languageEnglish
Article number033512
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This work has been financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grand No. R15-20040924-00000-0) and by the BK21 Project.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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