Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics

We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at ±15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of ∼10³ of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures.