Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

Sunho Jeong; Dongjo Kim; Sul Lee; Bong Kyun Park; Jooho Moon

doi:10.1063/1.2338753

Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

Sunho Jeong, Dongjo Kim, Sul Lee, Bong Kyun Park, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4-1.65 MV/cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO₂.

Original language	English
Article number	092101
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2338753
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory (NRL) Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2338753

Cite this

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title = "Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors",

abstract = "Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4-1.65 MV/cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO2.",

author = "Sunho Jeong and Dongjo Kim and Sul Lee and Park, {Bong Kyun} and Jooho Moon",

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T1 - Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

AU - Jeong, Sunho

AU - Kim, Dongjo

AU - Lee, Sul

AU - Park, Bong Kyun

AU - Moon, Jooho

N1 - Funding Information: This work was supported by the National Research Laboratory (NRL) Program of the Korea Science and Engineering Foundation.

PY - 2006

Y1 - 2006

N2 - Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4-1.65 MV/cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO2.

AB - Using a thermally cross-linkable organosiloxane-based organic-inorganic hybrid material, a solution-processable gate dielectric layer for organic thin-film transistors has been fabricated. The hybrid dielectric was synthesized by a sol-gel process, followed by heat treatment at below 190°C. Dielectric strength of 1.4-1.65 MV/cm was measured and it was confirmed that the leakage current is governed by the Poole-Frenkel emission mechanism in which the silanol groups act as trap sites. An organic thin-film transistor utilizing the hybrid dielectric shows similar electrical performance to a transistor fabricated using surface-modified thermally grown SiO2.

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Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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