Optoelectronic properties of three-dimensional ZnO hybrid structure

Min Chang Jeong; Byeong Yun Oh; Woong Lee; Jae Min Myoung

doi:10.1063/1.1872209

Optoelectronic properties of three-dimensional ZnO hybrid structure

Min Chang Jeong, Byeong Yun Oh, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.

Original language	English
Article number	103105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	10
DOIs	https://doi.org/10.1063/1.1872209
Publication status	Published - 2005 Mar 7

Bibliographical note

Funding Information:
This work was supported by the National R&D Project for Nano Science and Technology.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1872209

Cite this

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abstract = "Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.",

author = "Jeong, {Min Chang} and Oh, {Byeong Yun} and Woong Lee and Myoung, {Jae Min}",

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AU - Oh, Byeong Yun

AU - Lee, Woong

AU - Myoung, Jae Min

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AB - Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a ZnO buffer layer, a ZnO nanowire array, and a ZnO film continuously through the control of supersaturation conditions. Lower and upper ends of vertically aligned nanowires in this hybrid structure formed seamless interfacial contacts with the buffer layer and the film for current conduction. Photocurrent was generated only when the ultraviolet (UV) light (λ=350 nm) was irradiated. This structure also exhibited different atmosphere-dependent responses to the UV light. The optoelectronic properties of the 3D structure are attributed to the photogenerated carriers and the surface reaction of negatively charged oxygen species in ZnO nanowires.

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Optoelectronic properties of three-dimensional ZnO hybrid structure

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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