Optoelectronic In-Ga-Zn-O Memtransistors for Artificial Vision System

Weijie Qiu, Yulong Huang, Ling An Kong, Yang Chen, Wanrong Liu, Zhen Wang, Jia Sun, Qing Wan, Jeong Ho Cho, Junliang Yang, Yongli Gao

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

An artificial vision system that can simulate the visual functions of human eyes is required for biological robots. Here, In-Ga-Zn-O memtransistors using a naturally oxidized Al2O3 and an ion gel as a common gate stacking dielectric is proposed. Positive charge trapping in the Al2O3 layer can be induced by modulating the gate voltage, which causes the back sweep subthreshold swing (SS) of the device to break the physical limit (≥60 mV per decade at room temperature), and the minimum SS is as low as 26.4 mV per decade. In addition, photogenerated charges in the device are captured at the In-Ga-Zn-O channel/ion gel interface due to the superposition of the additional electric field generated by positive charges trapped in the Al2O3 layer and the external gate electric field. Thus, persistent photoconductivity is observed in the In-Ga-Zn-O memtransistors. Finally, by employing the optoelectronic memristive functions of In-Ga-Zn-O memtransistors, an artificial vision system based on artificial retinal array (ARA) and artificial neural network is proposed. An obvious improvement in the recognition rate and efficiency with the use of ARA for the image preprocessing is achieved. This study provides a new strategy for the realization of artificial vision systems.

Original languageEnglish
Article number2002325
JournalAdvanced Functional Materials
Volume30
Issue number40
DOIs
Publication statusPublished - 2020 Oct 1

Bibliographical note

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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