Abstract
Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.
Original language | English |
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Title of host publication | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 609-612 |
Number of pages | 4 |
ISBN (Electronic) | 9781467381550 |
DOIs | |
Publication status | Published - 2015 |
Event | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30 |
Publication series
Name | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
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Other
Other | 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 |
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Country/Territory | Italy |
City | Rome |
Period | 15/7/27 → 15/7/30 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
All Science Journal Classification (ASJC) codes
- Process Chemistry and Technology
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films