Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi; Joo Hyoung Kim; Jung Ki Min; Min Ji Park; Kyung Hwa Yoo; Young Wook Chang

doi:10.1109/NANO.2015.7388678

Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

Sum Gyun Yi, Joo Hyoung Kim, Jung Ki Min, Min Ji Park, Kyung Hwa Yoo, Young Wook Chang

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	609-612
Number of pages	4
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388678
Publication status	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15/7/27 → 15/7/30

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/NANO.2015.7388678

Cite this

Yi, S. G., Kim, J. H., Min, J. K., Park, M. J., Yoo, K. H., & Chang, Y. W. (2015). Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 609-612). Article 7388678 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388678

@inproceedings{dea27cfbcfd04567b559d5ab17dcfa9a,

title = "Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction",

abstract = "Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.",

keywords = "Transition metal dichalcogenides, p-n heterojunction, photocurrent mapping, photovoltaic effects",

author = "Yi, {Sum Gyun} and Kim, {Joo Hyoung} and Min, {Jung Ki} and Park, {Min Ji} and Yoo, {Kyung Hwa} and Chang, {Young Wook}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388678",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "609--612",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

address = "United States",

}

Yi, SG, Kim, JH, Min, JK, Park, MJ, Yoo, KH & Chang, YW 2015, Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388678, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 609-612, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388678

Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction. / Yi, Sum Gyun; Kim, Joo Hyoung; Min, Jung Ki et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 609-612 7388678 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

AU - Yi, Sum Gyun

AU - Kim, Joo Hyoung

AU - Min, Jung Ki

AU - Park, Min Ji

AU - Yoo, Kyung Hwa

AU - Chang, Young Wook

PY - 2015

Y1 - 2015

N2 - Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

AB - Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe2 and MoS2 since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.

KW - Transition metal dichalcogenides

KW - p-n heterojunction

KW - photocurrent mapping

KW - photovoltaic effects

UR - http://www.scopus.com/inward/record.url?scp=84964378526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964378526&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388678

DO - 10.1109/NANO.2015.7388678

M3 - Conference contribution

AN - SCOPUS:84964378526

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 609

EP - 612

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

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UN SDGs

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