Opto-electrical properties of sputtered AlN films

J. P. Kar; G. Bose; S. Tuli; S. Mukhejee; J. M. Myoung

Opto-electrical properties of sputtered AlN films

J. P. Kar, G. Bose, S. Tuli, S. Mukhejee, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

AlN films were grown on silicon by DC reactive magnetron sputtering and Al/AlN/Si structures were fabricated to study the influence of post metalization annealing (PMA) and UV light. Thereafter, the samples were annealed at 350 ^oC for 30 minutes in presence of argon gas. Reduction of hysteresis as well as interface state density was observed as a result of PMA. On the other hand, a ledge appeared in C-V curves, which became prominent with light intensity. The leakage current increased significantly as a result of photo generated charge carriers.

Original language	English
Pages (from-to)	631-633
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	3
Issue number	6
Publication status	Published - 2009 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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abstract = "AlN films were grown on silicon by DC reactive magnetron sputtering and Al/AlN/Si structures were fabricated to study the influence of post metalization annealing (PMA) and UV light. Thereafter, the samples were annealed at 350 oC for 30 minutes in presence of argon gas. Reduction of hysteresis as well as interface state density was observed as a result of PMA. On the other hand, a ledge appeared in C-V curves, which became prominent with light intensity. The leakage current increased significantly as a result of photo generated charge carriers.",

author = "Kar, {J. P.} and G. Bose and S. Tuli and S. Mukhejee and Myoung, {J. M.}",

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AU - Kar, J. P.

AU - Bose, G.

AU - Tuli, S.

AU - Mukhejee, S.

AU - Myoung, J. M.

PY - 2009/6

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N2 - AlN films were grown on silicon by DC reactive magnetron sputtering and Al/AlN/Si structures were fabricated to study the influence of post metalization annealing (PMA) and UV light. Thereafter, the samples were annealed at 350 oC for 30 minutes in presence of argon gas. Reduction of hysteresis as well as interface state density was observed as a result of PMA. On the other hand, a ledge appeared in C-V curves, which became prominent with light intensity. The leakage current increased significantly as a result of photo generated charge carriers.

AB - AlN films were grown on silicon by DC reactive magnetron sputtering and Al/AlN/Si structures were fabricated to study the influence of post metalization annealing (PMA) and UV light. Thereafter, the samples were annealed at 350 oC for 30 minutes in presence of argon gas. Reduction of hysteresis as well as interface state density was observed as a result of PMA. On the other hand, a ledge appeared in C-V curves, which became prominent with light intensity. The leakage current increased significantly as a result of photo generated charge carriers.

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SN - 1842-6573

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JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 6

ER -

Opto-electrical properties of sputtered AlN films

Abstract

All Science Journal Classification (ASJC) codes

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