Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee; Kibum Kim; Jae Hoon Kim; Seongil Im; Duk Young Jung

doi:10.1063/1.1580993

Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee, Kibum Kim, Jae Hoon Kim, Seongil Im, Duk Young Jung

Department of Physics

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al₂O_3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

Original language	English
Pages (from-to)	4169-4171
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	23
DOIs	https://doi.org/10.1063/1.1580993
Publication status	Published - 2003 Jun 9

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1580993

Cite this

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title = "Optimum channel thickness in pentacene-based thin-film transistors",

abstract = "The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.",

author = "Jiyoul Lee and Kibum Kim and Kim, {Jae Hoon} and Seongil Im and Jung, {Duk Young}",

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AU - Jung, Duk Young

PY - 2003/6/9

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N2 - The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

AB - The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

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Optimum channel thickness in pentacene-based thin-film transistors

Abstract

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