Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee, Kibum Kim, Jae Hoon Kim, Seongil Im, Duk Young Jung

Research output: Contribution to journalArticlepeer-review

97 Citations (Scopus)


The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

Original languageEnglish
Pages (from-to)4169-4171
Number of pages3
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2003 Jun 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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