Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

C. S. Choi; W. Y. Choi; M. H. Joo; J. H. Song; S. Im

doi:10.1116/1.1458953

Optimum B⁺ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

C. S. Choi, W. Y. Choi, M. H. Joo, J. H. Song, S. Im

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×10¹³ B cm^-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

Original language	English
Pages (from-to)	613-617
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1458953
Publication status	Published - 2002 Mar

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.",

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AU - Choi, C. S.

AU - Choi, W. Y.

AU - Joo, M. H.

AU - Song, J. H.

AU - Im, S.

PY - 2002/3

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N2 - Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

AB - Boron ion implantation was performed to investigate the optimum condition for the edge termination of the Au/n-Si Schottky diodes. It was found that if the ion dose was controlled at a low-dose regime, the Schottky diodes with edge termination had much higher breakdown voltages than the diodes without edge termination. Diode implanted with 1×1013 B cm-2 at 30 keV was found to have the highest breakdown voltage of 386 V while diode treated at 20 keV had abrupt breakdown at only 150 V. The abrupt breakdown resulted from the high electric field near the Au contact edge.

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Optimum B⁺ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

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