As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices. Thus, three-dimensional (3D) channel field-effect transistors (FETs), such as fin-shaped FETs (Fin-FETs) and gate-all-around FETs (GAAFETs), have become popular as they have increased effective surface areas for the channels (Weff), owing to the scaling down strategy. These 3D channel FETs, which have completely covered channel structures with gate oxide and metal, are prone to the self-heating effect (SHE). The SHE is generally known to degrade the on-state drain current; however, when AC pulsed inputs are applied to these devices, the SHE also degrades the off-state leakage current during the off-phase of the pulse. In this study, an optimization methodology to minimize leakage current generation by the SHE is examined.
Bibliographical noteFunding Information:
Funding: This work was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program at Yonsei University. And The APC was supported by Y-BASE R&E Institute, a Brain Korea 21 four program, Yonsei University.
Acknowledgments: This work has been supported by Y-BASE R&E Institute, a Brain Korea 21 four program, Yonsei University. The electronic design automation (EDA) tool was also supported by the IC Design Education Center (IDEC), Seoul, Korea.
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering