Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Seongil Im; Jack Washburn; Ronald Gronsky; Nathan W. Cheung; Kin Man Yu; Joel W. Ager

doi:10.1063/1.110419

Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, Joel W. Ager

Department of Physics

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Abstract

In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×10¹⁶/cm²) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

Original language	English
Pages (from-to)	2682-2684
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	19
DOIs	https://doi.org/10.1063/1.110419
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110419

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title = "Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers",

abstract = "In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.",

author = "Seongil Im and Jack Washburn and Ronald Gronsky and Cheung, {Nathan W.} and Yu, {Kin Man} and Ager, {Joel W.}",

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T1 - Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

AU - Im, Seongil

AU - Washburn, Jack

AU - Gronsky, Ronald

AU - Cheung, Nathan W.

AU - Yu, Kin Man

AU - Ager, Joel W.

PY - 1993

Y1 - 1993

N2 - In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

AB - In order to study the strain-compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

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JO - Applied Physics Letters

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Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

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