Optimization and device application potential of oxide-metal-oxide transparent electrode structure

Yun Cheol Kim, Su Jeong Lee, Hanearl Jung, Bo Eun Park, Hyungjun Kim, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Structural optimization of the indium zinc oxide (IZO)-Ag-IZO oxide-metal-oxide (OMO) transparent flexible electrode structure was carried out in terms of the thickness of the Ag layer based on the Haacke figure of merit. While showing sufficient sheet resistance and visible transmittance, the optimized OMO structure also exhibited good resistance to fracture under repeated bending which resulted in very small change in sheet resistance over the 10000 cycles of repeated bending. Low sheet resistance was found to be beneficial to lowering the contact resistances at the source and drain electrodes when the OMO structure was applied to a model thin film transistor (TFT) as revealed in the improved device performances. Device application potential of the OMO structure was demonstrated in a fully transparent TFT formed on a glass substrate in which the source, drain, and back gate electrodes were all formed using the OMO structure.

Original languageEnglish
Pages (from-to)65094-65099
Number of pages6
JournalRSC Advances
Issue number80
Publication statusPublished - 2015 Jul 24

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2015.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)


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