We present the results of the optical transitions in InGaN/GaN double heterostructures (DHs) grown by metal-organic chemical vapor deposition. The emission intensities (I emi) of the main PL peaks increase superlinearly with excitation intensity (I exc), following a power-law form, I emi ∝ I exc β. To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with various delay times and the PL decay times as a function of emission energy.
|Journal of the Korean Physical Society
|Published - 1999
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy