Optical properties of self-assembled in As quantum-dot superluminescent diodes

Soon Il Jung; Ligu Yun; Joo In Lee; Il Ki Han

doi:10.3938/jkps.55.24

Optical properties of self-assembled in As quantum-dot superluminescent diodes

Soon Il Jung, Ligu Yun, Joo In Lee, Il Ki Han

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.

Original language	English
Pages (from-to)	24-27
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.24
Publication status	Published - 2009 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.55.24

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title = "Optical properties of self-assembled in As quantum-dot superluminescent diodes",

abstract = "We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.",

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year = "2009",

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AU - Jung, Soon Il

AU - Yun, Ligu

AU - Lee, Joo In

AU - Han, Il Ki

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AB - We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled In As quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.

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Optical properties of self-assembled in As quantum-dot superluminescent diodes

Abstract

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