@inproceedings{025427f450c64c1ebf5964c4d6d52686,
title = "Optical properties of green light-emitting diodes grown on r-plane sapphire substrates",
abstract = "Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour deposition (MOCVD) on r-plane sapphire substrates. An optical output power of 0.26 mW was obtained at a drive current of 20 mA and 1.27 mW at 100 mA, with peak emission wavelengths of 504.5 nm and 503.9 nm, respectively. The peak emission wavelength shift for the green LED was 4.4 nm when the injection current was changed from 5 to 100 mA.",
author = "Seo, {Yong Gon} and Baik, {Kwang Hyeon} and Song, {Hoo Young} and Son, {Ji Su} and Jihoon Kim and Kyunghwan Oh and Hwang, {Sung Min}",
year = "2011",
language = "English",
isbn = "9780977565771",
series = "Optics InfoBase Conference Papers",
pages = "1215--1216",
booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011",
note = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 ; Conference date: 28-08-2011 Through 01-09-2011",
}