Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

Eunsoon Oh; Jung Ho Choi; Han Kyu Seong; Heon Jin Choi

doi:10.1063/1.2243868

Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

Eunsoon Oh, Jung Ho Choi, Han Kyu Seong, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn²⁺ has to be at least one order of magnitude smaller than that in Cd_0.94Mn_0.06S nanowires.

Original language	English
Article number	092109
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2243868
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by Basic Research Program of the Korea Research Foundation (Grant No. R04-2003-000-10020-0) and Korea Science and Engineering Foundation (Grant No. R01-2005-000-10616-0). One of the authors (H.J.C.) thanks support from Korea Research Foundation (Grant No. KRF-2005-042-D00203).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2243868

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title = "Optical properties of GaN and GaMnN nanowires grown on sapphire substrates",

abstract = "The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.",

author = "Eunsoon Oh and Choi, {Jung Ho} and Seong, {Han Kyu} and Choi, {Heon Jin}",

note = "Funding Information: This work was supported by Basic Research Program of the Korea Research Foundation (Grant No. R04-2003-000-10020-0) and Korea Science and Engineering Foundation (Grant No. R01-2005-000-10616-0). One of the authors (H.J.C.) thanks support from Korea Research Foundation (Grant No. KRF-2005-042-D00203).",

year = "2006",

doi = "10.1063/1.2243868",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

AU - Oh, Eunsoon

AU - Choi, Jung Ho

AU - Seong, Han Kyu

AU - Choi, Heon Jin

N1 - Funding Information: This work was supported by Basic Research Program of the Korea Research Foundation (Grant No. R04-2003-000-10020-0) and Korea Science and Engineering Foundation (Grant No. R01-2005-000-10616-0). One of the authors (H.J.C.) thanks support from Korea Research Foundation (Grant No. KRF-2005-042-D00203).

PY - 2006

Y1 - 2006

N2 - The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

AB - The authors discussed the photoluminescence (PL) spectra of GaN and GaMnN nanowires grown on sapphire substrates. Comparison of the excitonic PL peak energy with bulk GaN indicates that the strain of the nanowires is fully relaxed. For GaMnN nanowires, the redshift of the PL peak with increasing temperature was larger than that of the GaN nanowires, which was explained by redistribution of carriers into localization sites. The absence of Zeeman shift and circular polarization in GaMnN nanowires indicates that the exchange interaction between carriers and Mn2+ has to be at least one order of magnitude smaller than that in Cd0.94Mn0.06S nanowires.

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Optical properties of GaN and GaMnN nanowires grown on sapphire substrates

Abstract

Bibliographical note

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