Optical phonons of SnSe(1−x)S x layered semiconductor alloys

Tharith Sriv; Thi Minh Hai Nguyen; Yangjin Lee; Soo Yeon Lim; Van Quang Nguyen; Kwanpyo Kim; Sunglae Cho; Hyeonsik Cheong

doi:10.1038/s41598-020-68744-2

Optical phonons of SnSe_(1−x)S_x layered semiconductor alloys

Tharith Sriv, Thi Minh Hai Nguyen, Yangjin Lee, Soo Yeon Lim, Van Quang Nguyen, Kwanpyo Kim, Sunglae Cho, Hyeonsik Cheong

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The evolution of the optical phonons in layered semiconductor alloys SnSe_(1–x)S_x is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the A_g² mode of SnSe_(1−x)S_x (0 ≤ x ≤ 1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of A_g¹, A_g² and B_3g¹ in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B_3g², A_g³ and A_g⁴ show two-mode behavior.

Original language	English
Article number	11761
Journal	Scientific reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-68744-2
Publication status	Published - 2020 Dec 1

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20173010012980) and the Basic Science Research Program through the National Research Foundation of Korea (NRF-2017R1A5A1014862, NRF-2019R1F1A1058473 and NRF-2019R1A6A1A11053838) and Institute for Basic Science (IBS-R026-D1). T.S. acknowledges the supports from Swedish International Development Cooperation Agency (SIDA) through Sweden and Royal University of Phnom Penh (RUPP)’s Pilot Research Cooperation Programme (Sida Contribution No. 11599) and RUPP.

Publisher Copyright:
© 2020, The Author(s).

All Science Journal Classification (ASJC) codes

General

Access to Document

10.1038/s41598-020-68744-2

Cite this

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title = "Optical phonons of SnSe(1−x)S x layered semiconductor alloys",

abstract = "The evolution of the optical phonons in layered semiconductor alloys SnSe(1–x)Sx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe(1−x)Sx (0 ≤ x ≤ 1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.",

author = "Tharith Sriv and Nguyen, {Thi Minh Hai} and Yangjin Lee and Lim, {Soo Yeon} and Nguyen, {Van Quang} and Kwanpyo Kim and Sunglae Cho and Hyeonsik Cheong",

note = "Funding Information: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20173010012980) and the Basic Science Research Program through the National Research Foundation of Korea (NRF-2017R1A5A1014862, NRF-2019R1F1A1058473 and NRF-2019R1A6A1A11053838) and Institute for Basic Science (IBS-R026-D1). T.S. acknowledges the supports from Swedish International Development Cooperation Agency (SIDA) through Sweden and Royal University of Phnom Penh (RUPP){\textquoteright}s Pilot Research Cooperation Programme (Sida Contribution No. 11599) and RUPP. Publisher Copyright: {\textcopyright} 2020, The Author(s).",

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AU - Nguyen, Thi Minh Hai

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AU - Lim, Soo Yeon

AU - Nguyen, Van Quang

AU - Kim, Kwanpyo

AU - Cho, Sunglae

AU - Cheong, Hyeonsik

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N2 - The evolution of the optical phonons in layered semiconductor alloys SnSe(1–x)Sx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe(1−x)Sx (0 ≤ x ≤ 1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.

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