TY - JOUR
T1 - Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing
AU - Ryu, Huije
AU - Hong, Seong Chul
AU - Kim, Kangwon
AU - Jung, Yeonjoon
AU - Lee, Yangjin
AU - Lee, Kihyun
AU - Kim, Youngbum
AU - Kim, Hyunjun
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Kim, Jeongyong
AU - Kim, Kwanpyo
AU - Cheong, Hyeonsik
AU - Lee, Gwan Hyoung
N1 - Publisher Copyright:
© 2024 The Royal Society of Chemistry.
PY - 2024/2/26
Y1 - 2024/2/26
N2 - Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
AB - Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85187012975&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85187012975&partnerID=8YFLogxK
U2 - 10.1039/d3nr06641j
DO - 10.1039/d3nr06641j
M3 - Article
C2 - 38439548
AN - SCOPUS:85187012975
SN - 2040-3364
VL - 16
SP - 5836
EP - 5844
JO - Nanoscale
JF - Nanoscale
IS - 11
ER -