Optical characteristics of arsenic-doped ZnO nanowires

Woong Lee, Min Chang Jeong, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)


The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.

Original languageEnglish
Pages (from-to)6167-6169
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2004 Dec 20

Bibliographical note

Funding Information:
This work was supported by National R&D Project for Nano Science and Technology.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Optical characteristics of arsenic-doped ZnO nanowires'. Together they form a unique fingerprint.

Cite this