Optical characteristics of arsenic-doped ZnO nanowires

Woong Lee; Min Chang Jeong; Jae Min Myoung

doi:10.1063/1.1840124

Optical characteristics of arsenic-doped ZnO nanowires

Woong Lee, Min Chang Jeong, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.

Original language	English
Pages (from-to)	6167-6169
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	25
DOIs	https://doi.org/10.1063/1.1840124
Publication status	Published - 2004 Dec 20

Bibliographical note

Funding Information:
This work was supported by National R&D Project for Nano Science and Technology.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1840124

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title = "Optical characteristics of arsenic-doped ZnO nanowires",

abstract = "The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.",

author = "Woong Lee and Jeong, {Min Chang} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by National R&D Project for Nano Science and Technology.",

year = "2004",

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doi = "10.1063/1.1840124",

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AU - Lee, Woong

AU - Jeong, Min Chang

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by National R&D Project for Nano Science and Technology.

PY - 2004/12/20

Y1 - 2004/12/20

N2 - The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.

AB - The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13-290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical characteristics of arsenic-doped ZnO nanowires

Abstract

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