Optical and electrical transport properties in silicon carbide nanowires

Han Kyu Seong, Heon Jin Choi, Sang Kwon Lee, Jung Il Lee, Doo Jin Choi

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120 Citations (Scopus)


The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.

Original languageEnglish
Pages (from-to)1256-1258
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2004 Aug 16

Bibliographical note

Funding Information:
This work was supported by the National Program for Nanostructured Materials Technology of the Korea Ministry of Science and Technology as one of the 21st Century Frontier Program (No. 04K1501-01710), the Nano R&D program, and a grant from KIST (No. 2E17745).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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