Optical and electrical transport properties in silicon carbide nanowires

Han Kyu Seong; Heon Jin Choi; Sang Kwon Lee; Jung Il Lee; Doo Jin Choi

doi:10.1063/1.1781749

Optical and electrical transport properties in silicon carbide nanowires

Han Kyu Seong, Heon Jin Choi, Sang Kwon Lee, Jung Il Lee, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

120 Citations (Scopus)

Abstract

The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.

Original language	English
Pages (from-to)	1256-1258
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.1781749
Publication status	Published - 2004 Aug 16

Bibliographical note

Funding Information:
This work was supported by the National Program for Nanostructured Materials Technology of the Korea Ministry of Science and Technology as one of the 21st Century Frontier Program (No. 04K1501-01710), the Nano R&D program, and a grant from KIST (No. 2E17745).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1781749

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abstract = "The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.",

author = "Seong, {Han Kyu} and Choi, {Heon Jin} and Lee, {Sang Kwon} and Lee, {Jung Il} and Choi, {Doo Jin}",

note = "Funding Information: This work was supported by the National Program for Nanostructured Materials Technology of the Korea Ministry of Science and Technology as one of the 21st Century Frontier Program (No. 04K1501-01710), the Nano R&D program, and a grant from KIST (No. 2E17745).",

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AU - Seong, Han Kyu

AU - Choi, Heon Jin

AU - Lee, Sang Kwon

AU - Lee, Jung Il

AU - Choi, Doo Jin

N1 - Funding Information: This work was supported by the National Program for Nanostructured Materials Technology of the Korea Ministry of Science and Technology as one of the 21st Century Frontier Program (No. 04K1501-01710), the Nano R&D program, and a grant from KIST (No. 2E17745).

PY - 2004/8/16

Y1 - 2004/8/16

N2 - The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.

AB - The optical and electrical transport properties of single-crystalline silicon carbide (SiC) nanowires (NW) were discussed. Investigations show tha the SiC NW were instrinsic n-type semiconductors. The electrical measurements show that SiC NW had weak gating effect, low resistivity and low electron mobility. The data collected illustrated that the SiC NW were used in designing the high temperature operation sensors, detectors and actuators.

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Optical and electrical transport properties in silicon carbide nanowires

Abstract

Bibliographical note

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