We present a one-step route for micropatterning a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film with both molecular and microstructural crystal control over a large area. The method is based on the static mechanical shearing and subsequent detachment of a film spin coated on pre-patterned Al which has been lithographically prepared on a SiO2 substrate under appropriate thermal conditions. Selective detachment of the film in contact with the SiO2 substrate gave rise to micropatterns of PVDF-TrFE film positioned only on the Al regions. Further, the PVDF-TrFE film showed 25-nm-thick crystalline lamellae aligned perpendicular to the shear direction, wherein the c axis of the crystals was globally ordered parallel to the shear direction. The sheared and patterned PVDF-TrFE thin films are readily incorporated into non-volatile memory units of metal/ferroelectric/ metal capacitors and bottom gate-top contact field effect transistors, leading to arrays of memory devices with enhanced performance.
Bibliographical noteFunding Information:
This project was supported by The National Research Program for Memory Development sponsored by the Ministry of Knowledge and Economy, Republic of Korea . This work was partly supported by the IT R&D Program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology] and the Seoul R&BD Program (10816). The X-ray experiments at PAL (4C2 beamline), Korea, were supported by MEST and POSCO, Korea. This work was supported by the Second Stage of the Brain Korea 21 Project in 2006, the Converging Research Center Program funded by the Ministry of Education, Science and Technology ( 2010K001149 ), and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2010-0000425 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering