On-film tunneling resistance measurements of unpatterned magnetic tunnel junctions

Sangho Lee, Yoonsung Han, Taejin Bae, Jongill Hong, Jaechul Shim, Eunsik Kim, Kukhyun Sunwoo

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4 Citations (Scopus)


We successfully measured not only the tunneling properties but also the magnetic properties of a magnetic tunnel junction without patterning the magnetic tunnel junction stack itself by the current-in-plane tunneling method. Arrays of in-line four-point-probe sets with different spacings defined on the wafer made it possible to evaluate film tunneling properties. The estimated results differed little from those estimated by the commercial instrument. The small standard deviations of measured magnetic properties prove that our method is indeed reliable. Even though the properties for a less than submicron spacing were not available, we could successfully estimate the major characteristics of magnetic tunnel junctions. Our method can be applied in any environment, even in air without any clean-room facilities, and completed in as little as a day.

Original languageEnglish
Article number093902
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2010 Nov 1

Bibliographical note

Funding Information:
The authors would like to thank Dr. Koji Tsunekawa for his help in film preparations and measurements. This research was supported in part by the Korea Research Foundation under Grant No. KRF-2006-312-C00527, by the National Research Foundation of Korea (NRF) under Grant No. 2009-007-6116, by the Pioneer Research Center Program through the NRF (Grant No. 2009-008-1530), and by the grant from Center for Nanoscale Mechatronics & Manufacturing, one of the 21st Century Frontier Research Programs (Grant No. 2010K000189) funded by the Ministry of Education, Science and Technology, Korea.

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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