An offset-compensated cross-coupled PFET bit-line (BL) conditioning circuit (OC-CPBC) and a selective negative BL write-assist circuit (SNBL-WA) are proposed for high-density FinFET static RAM (SRAM). The word-line (WL) underdrive read-assist and the negative BL write-assist circuits should be used for the stable operation of high-density FinFET SRAM. However, the WL underdrive read-assist circuit degrades the performance, and the negative BL write-assist circuit consumes a large amount of energy. The OC-CPBC enhances BL development during the evaluation phase by applying cross-coupled PFETs whose offset is compensated by precharging each of the two BLs separately through diode-connected cross-coupled PFETs. The SNBL-WA performs a write assist only when a write failure is detected, and this selective write assist reduces the write energy consumption. The simulation results show that the performance and energy consumption are improved by 41% and 48%, respectively, by applying the OC-CPBC and SNBL-WA to SRAM, even with a decrease in area.
|Number of pages
|IEEE Transactions on Circuits and Systems I: Regular Papers
|Published - 2015 Apr 1
Bibliographical notePublisher Copyright:
© 2004-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering