Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS

Taehui Na; Byungkyu Song; Jung Pill Kim; Seung H. Kang; Seong Ook Jung

doi:10.1109/JSSC.2016.2612235

Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS

Taehui Na, Byungkyu Song, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-generation memory. However, maintaining a target sensing margin is a challenge with technology scaling because of the increased process variation and decreased read cell current. This paper proposes an offset-canceling current-sampling sense amplifier (OCCS-SA) that is intended for use in deep submicrometer resistive NVM. The proposed OCCS-SA has the three major advantages of: 1) offset voltage cancellation; 2) double sensing margin structure; and 3) strong positive feedback. The measurement results from a 65 nm test chip show that the proposed OCCS-SA achieves 2.4 times faster sensing time (t_SEN) at a nominal supply voltage (V_DD) of 1.0 V and a greater than 20% reduction in V_DD at the same t_SEN, compared to the state-of-the-art current-sampling-based SA, which features offset voltage cancellation and weak positive feedback.

Original language	English
Article number	7676261
Pages (from-to)	496-504
Number of pages	9
Journal	IEEE Journal of Solid-State Circuits
Volume	52
Issue number	2
DOIs	https://doi.org/10.1109/JSSC.2016.2612235
Publication status	Published - 2017 Feb

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Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/JSSC.2016.2612235

Cite this

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abstract = "Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-generation memory. However, maintaining a target sensing margin is a challenge with technology scaling because of the increased process variation and decreased read cell current. This paper proposes an offset-canceling current-sampling sense amplifier (OCCS-SA) that is intended for use in deep submicrometer resistive NVM. The proposed OCCS-SA has the three major advantages of: 1) offset voltage cancellation; 2) double sensing margin structure; and 3) strong positive feedback. The measurement results from a 65 nm test chip show that the proposed OCCS-SA achieves 2.4 times faster sensing time (tSEN) at a nominal supply voltage (VDD) of 1.0 V and a greater than 20% reduction in VDD at the same tSEN, compared to the state-of-the-art current-sampling-based SA, which features offset voltage cancellation and weak positive feedback.",

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AU - Jung, Seong Ook

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Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS

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