Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS

Taehui Na, Byungkyu Song, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-generation memory. However, maintaining a target sensing margin is a challenge with technology scaling because of the increased process variation and decreased read cell current. This paper proposes an offset-canceling current-sampling sense amplifier (OCCS-SA) that is intended for use in deep submicrometer resistive NVM. The proposed OCCS-SA has the three major advantages of: 1) offset voltage cancellation; 2) double sensing margin structure; and 3) strong positive feedback. The measurement results from a 65 nm test chip show that the proposed OCCS-SA achieves 2.4 times faster sensing time (tSEN) at a nominal supply voltage (VDD) of 1.0 V and a greater than 20% reduction in VDD at the same tSEN, compared to the state-of-the-art current-sampling-based SA, which features offset voltage cancellation and weak positive feedback.

Original languageEnglish
Article number7676261
Pages (from-to)496-504
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Issue number2
Publication statusPublished - 2017 Feb

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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