Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements

Woo Jin Kim, Chang Su Kim, Sung Jin Jo, Sung Won Lee, Se Jong Lee, Hong Koo Baik

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19 Citations (Scopus)


Current-voltage and capacitance-voltage measurements of the organic thin-film transistors (OTFTs) were performed to observe the change of the surface state of gate dielectrics using various surface treatments. The hexamethyldisilazane (HMDS)-treated OTFTs, which has few OH groups on the dielectric surface, showed little hysteresis behavior than that of other surface-treated OTFTs. In particular, when the positive gate bias (for a depletion state) was applied, more hysteresis was observed, indicating that OH groups on a gate dielectric are responsible for the electron trapping in the channel. However, when the surface is terminated with (CH3) 3 -Si, eliminating OH groups by HMDS treatment, much less hysteresis was observed in the positive direction. Therefore, it seems apparent that an OH -free surface is desirable for a more stable operation of OTFTs.

Original languageEnglish
Article number007701ESL
Pages (from-to)H1-H4
JournalElectrochemical and Solid-State Letters
Issue number1
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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