Observation of in situ oxidation dynamics of vanadium thin film with ambient pressure X-ray photoemission spectroscopy

Geonhwa Kim, Joonseok Yoon, Hyukjun Yang, Hojoon Lim, Hyungcheol Lee, Changkil Jeong, Hyungjoong Yun, Beomgyun Jeong, Ethan Crumlin, Jouhahn Lee, Jaeyoung Lee, Honglyoul Ju, Bongjin Simon Mun

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The evolution of oxidation/reduction states of vanadium oxide thin film was monitored in situ as a function of oxygen pressure and temperature via ambient pressure X-ray photoemission spectroscopy. Spectra analysis showed that VO2 can be grown at a relatively low temperature, T ∼ 523 K, and that V2O5 oxide develops rapidly at elevated oxygen pressure. Raman spectroscopy was applied to confirm the formation of VO2 oxide inside of the film. In addition, the temperature-dependent resistivity measurement on the grown thin film, e.g., 20 nm exhibited a desirable metal-insulator transition of VO2 with a resistivity change of ∼1.5 × 103 times at 349.3 K, displaying typical characteristics of thick VO2 film, e.g., 100 nm thick. Our results not only provide important spectroscopic information for the fabrication of vanadium oxides, but also show that high quality VO2 films can be formed at relatively low temperature, which is highly critical for engineering oxide film for heat-sensitive electronic devices.

Original languageEnglish
Article number205305
JournalJournal of Applied Physics
Issue number20
Publication statusPublished - 2016 Nov 28

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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