@inproceedings{e490fb474bec44bd84fc7900773ac19b,
title = "Observation of in situ B-doped epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition",
abstract = "In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.",
author = "Byongju Kim and Hyunchul Jang and Byeon, {Dae Seop} and Sangmo Koo and Ko, {Dae Hong}",
year = "2014",
doi = "10.1109/ISTDM.2014.6874662",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "77--78",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",
note = "7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",
}