Observation of gate-controlled spinorbit interaction using a ferromagnetic detector

Youn Ho Park; Hyun Cheol Jang; Hyun Cheol Koo; Hyung Jun Kim; Joonyeon Chang; Suk Hee Han; Heon Jin Choi

doi:10.1063/1.3677936

Observation of gate-controlled spinorbit interaction using a ferromagnetic detector

Youn Ho Park, Hyun Cheol Jang, Hyun Cheol Koo, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

From the Shubnikov-de Haas oscillation, estimation of the spinorbit interaction parameter is possible only for very low temperature. An alternative method available for much wider temperature range is utilizing the ferromagnetic electrode which contacts the quantum well channel and reads the Fermi level of spin-up and -down subbands. The amount of spin-subband shift is controlled by a gate electric field and finally the spinorbit interaction induced by Rashba effect is obtained near room temperature. At T = 150 K, a gate voltage shifts the spin subband potential and changes the spinorbit interaction parameter by 23.

Original language	English
Article number	07C317
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3677936
Publication status	Published - 2012 Apr 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0016471) and the KIST Institutional Program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3677936

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title = "Observation of gate-controlled spinorbit interaction using a ferromagnetic detector",

abstract = "From the Shubnikov-de Haas oscillation, estimation of the spinorbit interaction parameter is possible only for very low temperature. An alternative method available for much wider temperature range is utilizing the ferromagnetic electrode which contacts the quantum well channel and reads the Fermi level of spin-up and -down subbands. The amount of spin-subband shift is controlled by a gate electric field and finally the spinorbit interaction induced by Rashba effect is obtained near room temperature. At T = 150 K, a gate voltage shifts the spin subband potential and changes the spinorbit interaction parameter by 23.",

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note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0016471) and the KIST Institutional Program.",

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T1 - Observation of gate-controlled spinorbit interaction using a ferromagnetic detector

AU - Park, Youn Ho

AU - Cheol Jang, Hyun

AU - Koo, Hyun Cheol

AU - Kim, Hyung Jun

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Choi, Heon Jin

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0016471) and the KIST Institutional Program.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - From the Shubnikov-de Haas oscillation, estimation of the spinorbit interaction parameter is possible only for very low temperature. An alternative method available for much wider temperature range is utilizing the ferromagnetic electrode which contacts the quantum well channel and reads the Fermi level of spin-up and -down subbands. The amount of spin-subband shift is controlled by a gate electric field and finally the spinorbit interaction induced by Rashba effect is obtained near room temperature. At T = 150 K, a gate voltage shifts the spin subband potential and changes the spinorbit interaction parameter by 23.

AB - From the Shubnikov-de Haas oscillation, estimation of the spinorbit interaction parameter is possible only for very low temperature. An alternative method available for much wider temperature range is utilizing the ferromagnetic electrode which contacts the quantum well channel and reads the Fermi level of spin-up and -down subbands. The amount of spin-subband shift is controlled by a gate electric field and finally the spinorbit interaction induced by Rashba effect is obtained near room temperature. At T = 150 K, a gate voltage shifts the spin subband potential and changes the spinorbit interaction parameter by 23.

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Observation of gate-controlled spinorbit interaction using a ferromagnetic detector

Abstract

Bibliographical note

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