Numerical design of sio ₂ bridges in stretchable thin film transistors

An amorphous indium-gallium-zinc oxide based inverter (a-IGZO inverter) was fabricated. Subsequently, its mechanical characteristics were investigated. A numerical method was adopted to optimize the a-IGZO inverter design. This optimization secured mechanical stability. The curvature at the edge of the SiO ₂ pad and the thickness of the indium-tin-oxide (ITO) electrode were accounted for in the models. The new model improved the mechanical stability when it was stretched by a total of 5% of its length along the x-axis and did not exhibit fractures or cracks. In contrast, the referenced model fractured under the same condition. It has been verified by both experiments and simulations that newly designed models obtain mechanical stability.