Numerical analysis on the mechanical properties of organic thin film transistor

S. C. Lee, D. K. Lee, Y. G. Seol, J. H. Ahn, N. E. Lee, Y. J. Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The organic thin film transistor (OTFT) on flexible substrate electroplated electrodes has many advantages as in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical and electrical characteristics of the OTFT with various voltage conditions by using COMSOL. The model consisting of a channel, source and drain was employed to investigate the temperature distribution and thermal stress concentration. The channel length is 40 m and the voltage ranged between -20V and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Mechanical properties of the fabricated OTFT were characterized by thermal stress which was predicted with the result of stress distribution.

Original languageEnglish
Pages (from-to)1471-1474
Number of pages4
JournalModern Physics Letters B
Issue number13
Publication statusPublished - 2010 May 30

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics


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