Nucleation behavior of atomic layer deposited SiO2 for Hf-silicate films

Kwun Bum Chung, W. J. Lee, C. Y. Kim, Mann Ho Cho, Dae Won Moon

Research output: Contribution to journalArticlepeer-review


The nucleation and growth of SiO2, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO2 required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 1014 Si/cm2, respectively. The growth of SiO2 on the initial HfO2 surface increased as a function of HfO2 coverage and growth when the HfO2 coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO2 is ∼7 × 1014 Si/cm2, which corresponds to a coverage of 1 ML SiO2. The nucleation of SiO2 greatly depends on the initial surface conditions. In addition, the nucleation of SiO2 has a tendency to become saturated, regardless of the initial surface conditions.

Original languageEnglish
Pages (from-to)G43-G47
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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