For the first time, we propose and experimentally demonstrate a novel single-transistor(1T) DRAM: Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM). The memory operation is obtained by engineering the body of the transistor with CTs by creating intentional electron-trapping zones. This memory makes use of charge traps and uses the existence or absence of electrons in its body instead of holes that are conventionally used in 1T DRAMs whose operation depends on floating-body effects. The DRAM operation is experimentally demonstrated.
Bibliographical noteFunding Information:
Manuscript received December 29, 2009. Date of publication March 25, 2010; date of current version April 23, 2010. This work was supported in part by the Stanford University Initiative for Nonvolatile Memory Materials and Devices (NMTRI) and in part a Stanford Graduate Fellowship. The review of this letter was arranged by Editor S. Kawamura.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering