Novel capacitor technology for high density stand-alone and embedded DRAMs

Yeong Kwan Kim; Seung Hwan Lee; Sung Je Choi; Hong Bae Park; Young Dong Seo; Kwang Hyun Chin; Dongchan Kim; Jae Soon Lim; Wan Don Kim; Kab Jin Nam; Man Ho Cho; Ki Hyun Hwang; Young Sun Kim; Seok Sik Kim; Young Wook Park; Joo Tae Moon; Sang In Lee; Moon Yong Lee

doi:10.1109/IEDM.2000.904332

Novel capacitor technology for high density stand-alone and embedded DRAMs

Yeong Kwan Kim, Seung Hwan Lee, Sung Je Choi, Hong Bae Park, Young Dong Seo, Kwang Hyun Chin, Dongchan Kim, Jae Soon Lim, Wan Don Kim, Kab Jin Nam, Man Ho Cho, Ki Hyun Hwang, Young Sun Kim, Seok Sik Kim, Young Wook Park, Joo Tae Moon, Sang In Lee, Moon Yong Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Novel Al₂O₃ process was developed in order to extend the applicability of reliable SIS and MIS Al₂O₃ capacitors as well as Al₂O₃ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al₂O₃ film were surprisingly improved. The SIS and MIS Al₂O₃ capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1Gbit DRAM with design rule of 0.15 and 0.13μm, respectively. Moreover, Al₂O₃ EBL for a MIM capacitor was successfully working to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 μm, and beyonds.

Original language	English
Pages (from-to)	369-372
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2000.904332
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2000.904332

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Kim, Y. K., Lee, S. H., Choi, S. J., Park, H. B., Seo, Y. D., Chin, K. H., Kim, D., Lim, J. S., Kim, W. D., Nam, K. J., Cho, M. H., Hwang, K. H., Kim, Y. S., Kim, S. S., Park, Y. W., Moon, J. T., Lee, S. I., & Lee, M. Y. (2000). Novel capacitor technology for high density stand-alone and embedded DRAMs. Technical Digest - International Electron Devices Meeting, 369-372. https://doi.org/10.1109/IEDM.2000.904332

@article{e260284d411042aa84fc9f420332b545,

title = "Novel capacitor technology for high density stand-alone and embedded DRAMs",

abstract = "Novel Al2O3 process was developed in order to extend the applicability of reliable SIS and MIS Al2O3 capacitors as well as Al2O3 EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al2O3 film were surprisingly improved. The SIS and MIS Al2O3 capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1Gbit DRAM with design rule of 0.15 and 0.13μm, respectively. Moreover, Al2O3 EBL for a MIM capacitor was successfully working to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 μm, and beyonds.",

author = "Kim, {Yeong Kwan} and Lee, {Seung Hwan} and Choi, {Sung Je} and Park, {Hong Bae} and Seo, {Young Dong} and Chin, {Kwang Hyun} and Dongchan Kim and Lim, {Jae Soon} and Kim, {Wan Don} and Nam, {Kab Jin} and Cho, {Man Ho} and Hwang, {Ki Hyun} and Kim, {Young Sun} and Kim, {Seok Sik} and Park, {Young Wook} and Moon, {Joo Tae} and Lee, {Sang In} and Lee, {Moon Yong}",

year = "2000",

doi = "10.1109/IEDM.2000.904332",

language = "English",

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journal = "Technical Digest - International Electron Devices Meeting",

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T1 - Novel capacitor technology for high density stand-alone and embedded DRAMs

AU - Kim, Yeong Kwan

AU - Lee, Seung Hwan

AU - Choi, Sung Je

AU - Park, Hong Bae

AU - Seo, Young Dong

AU - Chin, Kwang Hyun

AU - Kim, Dongchan

AU - Lim, Jae Soon

AU - Kim, Wan Don

AU - Nam, Kab Jin

AU - Cho, Man Ho

AU - Hwang, Ki Hyun

AU - Kim, Young Sun

AU - Kim, Seok Sik

AU - Park, Young Wook

AU - Moon, Joo Tae

AU - Lee, Sang In

AU - Lee, Moon Yong

PY - 2000

Y1 - 2000

N2 - Novel Al2O3 process was developed in order to extend the applicability of reliable SIS and MIS Al2O3 capacitors as well as Al2O3 EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al2O3 film were surprisingly improved. The SIS and MIS Al2O3 capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1Gbit DRAM with design rule of 0.15 and 0.13μm, respectively. Moreover, Al2O3 EBL for a MIM capacitor was successfully working to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 μm, and beyonds.

AB - Novel Al2O3 process was developed in order to extend the applicability of reliable SIS and MIS Al2O3 capacitors as well as Al2O3 EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al2O3 film were surprisingly improved. The SIS and MIS Al2O3 capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1Gbit DRAM with design rule of 0.15 and 0.13μm, respectively. Moreover, Al2O3 EBL for a MIM capacitor was successfully working to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 μm, and beyonds.

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DO - 10.1109/IEDM.2000.904332

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SN - 0163-1918

SP - 369

EP - 372

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

Novel capacitor technology for high density stand-alone and embedded DRAMs

Abstract

All Science Journal Classification (ASJC) codes

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