Novel capacitor technology for high density stand-alone and embedded DRAMs

Yeong Kwan Kim, Seung Hwan Lee, Sung Je Choi, Hong Bae Park, Young Dong Seo, Kwang Hyun Chin, Dongchan Kim, Jae Soon Lim, Wan Don Kim, Kab Jin Nam, Man Ho Cho, Ki Hyun Hwang, Young Sun Kim, Seok Sik Kim, Young Wook Park, Joo Tae Moon, Sang In Lee, Moon Yong Lee

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Novel Al2O3 process was developed in order to extend the applicability of reliable SIS and MIS Al2O3 capacitors as well as Al2O3 EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al2O3 film were surprisingly improved. The SIS and MIS Al2O3 capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1Gbit DRAM with design rule of 0.15 and 0.13μm, respectively. Moreover, Al2O3 EBL for a MIM capacitor was successfully working to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 μm, and beyonds.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Novel capacitor technology for high density stand-alone and embedded DRAMs'. Together they form a unique fingerprint.

Cite this