Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Hyun Seop Kim, Sang Woo Han, Won Ho Jang, Chun Hyung Cho, Kwang Seok Seo, Jungwoo Oh, Ho Young Cha

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ∼2 V, an ON-resistance of 7.85Ω·cm2, and a breakdown voltage of 640 V at the OFF-state current density of 1 μA/mm. The extracted interface trap density was 1×1012 cm-2·eV-1 at Ec - Et = 0.442 eV, which resulted in negligible hysteresis and excellent dynamic characteristics.

Original languageEnglish
Article number7959555
Pages (from-to)1090-1093
Number of pages4
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 2017 Aug

Bibliographical note

Funding Information:
This work was supported by NRF of Korea under Grant 2015R1A6A1A03031833, Grant 2012M3A7B4035274, and Grant 2016R1D1A1B03935445.

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric'. Together they form a unique fingerprint.

Cite this