Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

C. H. Park; K. H. Lee; B. H. Lee; Myung M. Sung; Seongil Im

doi:10.1109/INEC.2010.5424966

Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

C. H. Park, K. H. Lee, B. H. Lee, Myung M. Sung, Seongil Im

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al₂O₃ buffer layers. When our memory TFT has a thin Al₂O₃ layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm²/Vs. The device with the Al₂O₃ layer shows much longer retention properties over 10⁴ s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×10².

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1185-1186
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424966
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424966

Cite this

Park, C. H., Lee, K. H., Lee, B. H., Sung, M. M., & Im, S. (2010). Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1185-1186). [5424966] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424966

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title = "Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer",

abstract = "We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.",

author = "Park, {C. H.} and Lee, {K. H.} and Lee, {B. H.} and Sung, {Myung M.} and Seongil Im",

year = "2010",

doi = "10.1109/INEC.2010.5424966",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1185--1186",

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note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Park, CH, Lee, KH, Lee, BH, Sung, MM & Im, S 2010, Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424966, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1185-1186, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424966

Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. / Park, C. H.; Lee, K. H.; Lee, B. H. et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1185-1186 5424966 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

AU - Park, C. H.

AU - Lee, K. H.

AU - Lee, B. H.

AU - Sung, Myung M.

AU - Im, Seongil

PY - 2010

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N2 - We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.

AB - We report the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer and thin Al2O3 buffer layers. When our memory TFT has a thin Al2O3 layer inserted between P(VDF-TrFE) and ZnO channel: 5 nm, 10 nm and 20 nm. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with high field effect mobilities of 0.6-1 cm2/Vs. The device with the Al2O3 layer shows much longer retention properties over 104 s than the other without buffer. Depending on the thickness of buffer, our NVMTFT displays maximum memory window of ∼20 V and also exhibits WR-ER current ratio of 4×102.

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BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

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Park CH, Lee KH, Lee BH, Sung MM, Im S. Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1185-1186. 5424966. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). doi: 10.1109/INEC.2010.5424966

Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer

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