Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Jeong O. Lee, Hwangyou Oh, Jae Ryoung Kim, Kicheon Kang, Ju Jin Kim, Jinhee Kim, Kyung Hwa Yoo

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Electronic transport properties of a heterostructure junction made of two different multiwall carbon nanotubes are studied. Independent measurement of the current-voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current-voltage characteristics measured across the heterojunction show reproducible rectifying diode behavior. The forward bias current across the heterojunction increases rapidly with the application of a positive gate bias voltage, implying an n -type gate response.

Original languageEnglish
Pages (from-to)1351-1353
Number of pages3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2001 Aug 27

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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