Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Jeong O. Lee; Hwangyou Oh; Jae Ryoung Kim; Kicheon Kang; Ju Jin Kim; Jinhee Kim; Kyung Hwa Yoo

doi:10.1063/1.1396622

Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Jeong O. Lee, Hwangyou Oh, Jae Ryoung Kim, Kicheon Kang, Ju Jin Kim, Jinhee Kim, Kyung Hwa Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Electronic transport properties of a heterostructure junction made of two different multiwall carbon nanotubes are studied. Independent measurement of the current-voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current-voltage characteristics measured across the heterojunction show reproducible rectifying diode behavior. The forward bias current across the heterojunction increases rapidly with the application of a positive gate bias voltage, implying an n -type gate response.

Original language	English
Pages (from-to)	1351-1353
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	9
DOIs	https://doi.org/10.1063/1.1396622
Publication status	Published - 2001 Aug 27

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1396622

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AU - Oh, Hwangyou

AU - Kim, Jae Ryoung

AU - Kang, Kicheon

AU - Kim, Ju Jin

AU - Kim, Jinhee

AU - Yoo, Kyung Hwa

PY - 2001/8/27

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N2 - Electronic transport properties of a heterostructure junction made of two different multiwall carbon nanotubes are studied. Independent measurement of the current-voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current-voltage characteristics measured across the heterojunction show reproducible rectifying diode behavior. The forward bias current across the heterojunction increases rapidly with the application of a positive gate bias voltage, implying an n -type gate response.

AB - Electronic transport properties of a heterostructure junction made of two different multiwall carbon nanotubes are studied. Independent measurement of the current-voltage characteristics of each nanotube revealed that both of them were lightly p-doped semiconductors with energy gaps whose magnitudes are widely different from each other. The current-voltage characteristics measured across the heterojunction show reproducible rectifying diode behavior. The forward bias current across the heterojunction increases rapidly with the application of a positive gate bias voltage, implying an n -type gate response.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Nonlinear transport properties in multiwall carbon nanotube heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

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