Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon

Keorock Choi, Yunwon Song, Bugeun Ki, Jungwoo Oh

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We demonstrated time-dependent mass transport mechanisms of Au-assisted chemical etching of Si substrates. Variations in the etch rate and surface topology were correlated with catalyst features and etching duration. Nonlinear etching characteristics were associated with the formation of pinholes and whiskers. Variable rates of mass transport as a function of whisker density accounted for the nonlinear etch rates of Si. Nanopinholes on Au catalysts facilitated the vertical mass transport of reactants and byproducts, which dramatically changed the etch rate, surface topology, and porosity of Si. The suggested transport models describe the transient mass transport and the corresponding chemical reactions.

Original languageEnglish
Pages (from-to)2100-2105
Number of pages6
JournalACS Omega
Issue number5
Publication statusPublished - 2017 May 31

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)


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