Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application

Youn Jung Park; Seok Ju Kang; Yujin Shin; Richard H. Kim; Insung Bae; Cheolmin Park

doi:10.1016/j.cap.2010.11.119

Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application

Youn Jung Park, Seok Ju Kang, Yujin Shin, Richard H. Kim, Insung Bae, Cheolmin Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of ±12 V and ±5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro- and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated polydimethylesiloxane (PDMS) mold at 170 °C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 °C with good thermal stability.

Original language	English
Pages (from-to)	e30-e34
Journal	Current Applied Physics
Volume	11
Issue number	2 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.11.119
Publication status	Published - 2011 Mar

Bibliographical note

Funding Information:
This project was supported by The National Research Program for Memory Development sponsored by the Ministry of Knowledge and Economy, Republic of Korea. This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high-performance organic/nanomaterials and printing process technology] and this work was also supported (in part) by the Yonsei University Research Fund of 2010. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R11-2007-050-03001-0 ). Also, this work is supported by the Converging Research Center Program funded by the Ministry of Education, Science and Technology ( 2010K001149 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2010.11.119

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@article{83217550ba49422ea2c8d09fcd8ef8aa,

title = "Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application",

abstract = "Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of ±12 V and ±5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro- and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated polydimethylesiloxane (PDMS) mold at 170 °C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 °C with good thermal stability.",

author = "Park, {Youn Jung} and Kang, {Seok Ju} and Yujin Shin and Kim, {Richard H.} and Insung Bae and Cheolmin Park",

note = "Funding Information: This project was supported by The National Research Program for Memory Development sponsored by the Ministry of Knowledge and Economy, Republic of Korea. This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high-performance organic/nanomaterials and printing process technology] and this work was also supported (in part) by the Yonsei University Research Fund of 2010. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R11-2007-050-03001-0 ). Also, this work is supported by the Converging Research Center Program funded by the Ministry of Education, Science and Technology ( 2010K001149 ).",

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language = "English",

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journal = "Current Applied Physics",

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AU - Park, Youn Jung

AU - Kang, Seok Ju

AU - Shin, Yujin

AU - Kim, Richard H.

AU - Bae, Insung

AU - Park, Cheolmin

N1 - Funding Information: This project was supported by The National Research Program for Memory Development sponsored by the Ministry of Knowledge and Economy, Republic of Korea. This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high-performance organic/nanomaterials and printing process technology] and this work was also supported (in part) by the Yonsei University Research Fund of 2010. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R11-2007-050-03001-0 ). Also, this work is supported by the Converging Research Center Program funded by the Ministry of Education, Science and Technology ( 2010K001149 ).

PY - 2011/3

Y1 - 2011/3

N2 - Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of ±12 V and ±5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro- and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated polydimethylesiloxane (PDMS) mold at 170 °C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 °C with good thermal stability.

AB - Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of ±12 V and ±5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro- and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated polydimethylesiloxane (PDMS) mold at 170 °C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 °C with good thermal stability.

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Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application

Abstract

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