We demonstrate that a non-volatile majority function logic is formed by a 1T-nCstorage -1Cread cell in which a hafnia ferroelectric capacitor is used for computing in memory (CiM) and nonvolatile logic-in-memory (NV- LiM). We show a write operation of low voltage (< 3V) and high speed (< 20ns), with improved vphantomint endurance characteristics over 1011 cycles by adopting a novel write and read method. We performed a circuit-level analysis of an NV 1bit full adder. This adder achieves a power-delay-area product that is 4.8 and 53.5 times higher than the previous FeFET-based 1bit full adder when approximate computing is excluded and applied, respectively.
Bibliographical notePublisher Copyright:
© 1980-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering