Non-Lithographic Fabrication of All-2D α-MoTe₂ Dual Gate Transistors

Engineering

• Current Drain 20%
• Demonstrates 20%
• Drives 20%
• Electric Potential 20%
• Fabrication 40%
• Field-Effect Transistor 100%
• Logic Function 20%
• Molybdenum 40%
• Organic Light-Emitting Diode 20%
• Thermal Annealing 20%
• Transistor 20%

Material Science

• Boron Nitride 20%
• Dielectric Material 20%
• Electrical Property 20%
• Electron Mobility 20%
• Glass 60%
• Graphene 40%
• Hole Mobility 20%
• Lithography 40%
• Material 20%
• Optical Property 20%