Abstract
In this paper, several spiral inductors with various ground clearance structures and turns were investigated to achieve noise suppression up to the fourth harmonic (3.2 GHz) regime of DDR3-1600. Their performances were characterized in terms of their capability to effectively suppress simultaneous switching noise (SSN) in the frequency region of interest. For a wider noise suppression bandwidth, a spiral inductor with large ground clearance, which provides a high self resonance frequency (SRF) as well as high inductances, was implemented. The proposed spiral inductor exhibited good noise suppression characteristics in the frequency domain and achieved 50% voltage fluctuation reduction in the time domain, compared to the identical 4-turn spiral without pattern ground structure.
Original language | English |
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Pages (from-to) | 752-754 |
Number of pages | 3 |
Journal | IEICE Transactions on Electronics |
Volume | E96-C |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 May |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering