Abstract
In dual threshold voltage techniques, significant subthreshold leakage current is one of the most important design problems. Specially, when dual threshold voltage is applied to the domino logic, noise immunity has to be carefully considered because the significant subthreshold current makes dynamic node much more susceptible to noise. In this paper, an analytical model for proper keeper transistor sizing to meet noise constraint is presented. Based on the same noise constraint, we propose dual threshold voltage domino logic technique to save power consumption.
Original language | English |
---|---|
Pages (from-to) | IV158-IV161 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 626 |
Publication status | Published - 2001 |
Event | Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications - San Francisco, CA, United States Duration: 2000 Apr 24 → 2000 Apr 27 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering