Abstract
The authors fabricated a no-bias pi cell using a dual alignment layer with an intermediate pretilt angle via a rubbing. In the dual alignment layer system, the competition between crest region favoring the vertical alignment and trough region favoring planar alignment made it possible to achieve various pretilt angles, and adjusted pretilt angle from 90° to 20° with rubbing. In addition, as the intermediate pretilt angle plays a role in eliminating the activation energy and thus allowing formation of the initial bend state in pi cell fabrication, this approach achieved a no-bias pi cell for a liquid crystal display with both low power consumption and fast response.
| Original language | English |
|---|---|
| Article number | 023507 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 |
Bibliographical note
Funding Information:This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2006-000-11066-0), the SRC program of MOST∕KOSEF through the Center for Intelligent Nano-Bio Materials at Ewha Womans University (Grant No. R11-2005-008-00000-0), Seoul Research and Business Development Program (10816), the Korea Research Foundation (Grant No. KRF-2007-013-D00070), and Soongsil University. Authors are supported by the Brain Korea 21(BK 21) fellowship from the Ministry of Education of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)