No-bias-bend liquid-crystal display with an intermediate angle on blended polyimide via ion-beam irradiation

Hong Gyu Park; Byeong Yun Oh; Young Hwan Kim; Byoung Yong Kim; Jeong Min Han; Jeong Yeon Hwang; Dae Shik Seo

doi:10.1149/1.3074331

No-bias-bend liquid-crystal display with an intermediate angle on blended polyimide via ion-beam irradiation

Hong Gyu Park, Byeong Yun Oh, Young Hwan Kim, Byoung Yong Kim, Jeong Min Han, Jeong Yeon Hwang, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We created a no-bias-bend (NBB) pi cell on a blended polyimide (PI) layer with intermediate pretilt angles using the ion-beam method. Various pretilt angles were easily obtained depending on the concentration of homeotropic PI. The plot of surface tension corresponded to the variation of the pretilt angle. We also observed a uniform alignment of the liquid crystals on the blended PI layer. The NBB pi cell had a low threshold voltage of 0.9 V and a fast response time of 5.4 ms.

Original language	English
Pages (from-to)	J37-J39
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1149/1.3074331
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3074331

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title = "No-bias-bend liquid-crystal display with an intermediate angle on blended polyimide via ion-beam irradiation",

abstract = "We created a no-bias-bend (NBB) pi cell on a blended polyimide (PI) layer with intermediate pretilt angles using the ion-beam method. Various pretilt angles were easily obtained depending on the concentration of homeotropic PI. The plot of surface tension corresponded to the variation of the pretilt angle. We also observed a uniform alignment of the liquid crystals on the blended PI layer. The NBB pi cell had a low threshold voltage of 0.9 V and a fast response time of 5.4 ms.",

author = "Park, {Hong Gyu} and Oh, {Byeong Yun} and Kim, {Young Hwan} and Kim, {Byoung Yong} and Han, {Jeong Min} and Hwang, {Jeong Yeon} and Seo, {Dae Shik}",

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AU - Park, Hong Gyu

AU - Oh, Byeong Yun

AU - Kim, Young Hwan

AU - Kim, Byoung Yong

AU - Han, Jeong Min

AU - Hwang, Jeong Yeon

AU - Seo, Dae Shik

PY - 2009

Y1 - 2009

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AB - We created a no-bias-bend (NBB) pi cell on a blended polyimide (PI) layer with intermediate pretilt angles using the ion-beam method. Various pretilt angles were easily obtained depending on the concentration of homeotropic PI. The plot of surface tension corresponded to the variation of the pretilt angle. We also observed a uniform alignment of the liquid crystals on the blended PI layer. The NBB pi cell had a low threshold voltage of 0.9 V and a fast response time of 5.4 ms.

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JF - Electrochemical and Solid-State Letters

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ER -

No-bias-bend liquid-crystal display with an intermediate angle on blended polyimide via ion-beam irradiation

Abstract

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