Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

Sunil Babu Eadi; Hyeong Sub Song; Hyun Dong Song; Jungwoo Oh; Hi Deok Lee

doi:10.3390/coatings9060365

Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

Sunil Babu Eadi, Hyeong Sub Song, Hyun Dong Song, Jungwoo Oh, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10^-5 Ω-cm² was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

Original language	English
Article number	363
Journal	Coatings
Volume	9
Issue number	6
DOIs	https://doi.org/10.3390/coatings9060365
Publication status	Published - 2019 Jun 1

Bibliographical note

Publisher Copyright:
© 2019 by the authors.

All Science Journal Classification (ASJC) codes

Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.3390/coatings9060365

Cite this

@article{31775034f5b447f7b642cf059d85dbdd,

title = "Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi",

abstract = "In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.",

author = "Eadi, {Sunil Babu} and Song, {Hyeong Sub} and Song, {Hyun Dong} and Jungwoo Oh and Lee, {Hi Deok}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = jun,

day = "1",

doi = "10.3390/coatings9060365",

language = "English",

volume = "9",

journal = "Coatings",

issn = "2079-6412",

publisher = "MDPI AG",

number = "6",

}

TY - JOUR

T1 - Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

AU - Eadi, Sunil Babu

AU - Song, Hyeong Sub

AU - Song, Hyun Dong

AU - Oh, Jungwoo

AU - Lee, Hi Deok

PY - 2019/6/1

Y1 - 2019/6/1

N2 - In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

AB - In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

UR - http://www.scopus.com/inward/record.url?scp=85066620703&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066620703&partnerID=8YFLogxK

U2 - 10.3390/coatings9060365

DO - 10.3390/coatings9060365

M3 - Article

AN - SCOPUS:85066620703

SN - 2079-6412

VL - 9

JO - Coatings

JF - Coatings

IS - 6

M1 - 363

ER -

Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this