In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.
Bibliographical notePublisher Copyright:
© 2019 by the authors.
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry