Abstract
To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.
Original language | English |
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Pages (from-to) | 1-8 |
Number of pages | 8 |
Journal | ECS Transactions |
Volume | 61 |
Issue number | 38 |
DOIs | |
Publication status | Published - 2014 |
Event | Symposium on Solid State Topics General Session - 225th ECS Meeting - Orlando, United States Duration: 2014 May 11 → 2014 May 15 |
Bibliographical note
Publisher Copyright:© The Electrochemical Society.
All Science Journal Classification (ASJC) codes
- General Engineering