NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4

Hoon Jung Oh; Joo Hee Lee; Min Seon Lee; Woo Gon Shin; Sung Yong Kang; Gyu Dong Kim; Dae Hong Ko

doi:10.1149/06138.0001ecst

NF₃/NH₃ dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO₂, and Si₃N₄

Hoon Jung Oh, Joo Hee Lee, Min Seon Lee, Woo Gon Shin, Sung Yong Kang, Gyu Dong Kim, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

To understand the NF₃/NH₃ dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO₂, and Si₃N₄ using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF₃/NH₃ dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO₂ depending on the NF₃:NH₃ ratio and plasma power of the plasma reaction before (NH₄)₂SiF₆ by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO₂ surface to form (NH₄)₂SiF₆ by-product depending on the process conditions. A possible mechanism is presented.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	ECS Transactions
Volume	61
Issue number	38
DOIs	https://doi.org/10.1149/06138.0001ecst
Publication status	Published - 2014
Event	Symposium on Solid State Topics General Session - 225th ECS Meeting - Orlando, United States Duration: 2014 May 11 → 2014 May 15

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/06138.0001ecst

Cite this

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title = "NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4",

abstract = "To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.",

author = "Oh, {Hoon Jung} and Lee, {Joo Hee} and Lee, {Min Seon} and Shin, {Woo Gon} and Kang, {Sung Yong} and Kim, {Gyu Dong} and Ko, {Dae Hong}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Solid State Topics General Session - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

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T1 - NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4

AU - Oh, Hoon Jung

AU - Lee, Joo Hee

AU - Lee, Min Seon

AU - Shin, Woo Gon

AU - Kang, Sung Yong

AU - Kim, Gyu Dong

AU - Ko, Dae Hong

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

AB - To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

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